| abstract |
(57) [Abstract] [Purpose] Dry etching with high in-plane uniformity even for large diameter wafers by freely controlling the dissociation state of etching gas and ion current density distribution in the chamber in a helicon wave plasma device. . [Structure] A single loop antenna 6 for m = 0 mode plasma excitation facing a top plate 2 of a plasma generation chamber 1, and a m = 1 mode half turn for plasma excitation that circulates a side wall of the chamber. The antenna 7 is provided, and either the normal high frequency power source 13 or the pulse power source 14 is connected to the both antennas 6 and 7 by operating the switch 12, and the two modes are adjusted while adjusting the respective outputs by the drive amplifiers 62 and 72. Simultaneous continuous generation or the same time-interrupted generation of the helicon wave plasma P H is performed. [Effect] The increase in the etching rate of the Al-based wiring film around the wafer can be suppressed, so that the film loss of the base insulating film can be made uniform. |