| abstract |
(57) [Summary] [Structure] An abrasive comprising cerium oxide having an average particle diameter of 0.1 μm or less for use in a semiconductor device manufacturing process, and a slurry containing the abrasive at a concentration of 5 to 300 g / l. A polishing method for polishing in a semiconductor device manufacturing process using the same, and a polishing method for cleaning with a hydrogen peroxide-containing acid solution after the polishing process. [Effect] By using the abrasive of the present invention, an extremely good polishing rate, polishing accuracy and surface condition can be simultaneously achieved. |