http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100793527-B1

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filingDate 1998-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2008-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100793527-B1
titleOfInvention abrasive
abstract According to the present invention, at least one of the abrasive grains having two or more crystallites having a grain boundary or having cerium oxide particles and pores having a bulk density of 6.5 g / cm 3 or less for polishing a surface to be polished such as a SiO 2 insulating film at a high speed without defect. Provided are an abrasive comprising a slurry in which one is dispersed in a medium, a method of polishing a substrate using the abrasive, and a method of manufacturing a semiconductor device.n n n Grain boundaries, bulk density, cerium oxide particles, abrasives, particle diameters, crystallite diameters, slurries
priorityDate 1997-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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