abstract |
(57) [Summary] (Modified) [Structure] A photosensitive resin composition comprising a polymer compound represented by the following formula (I), a compound which generates an acid when exposed to radiation, and a solvent capable of dissolving them. And a thin film of the photosensitive resin composition is formed on a substrate and has a wavelength of 220 n. A pattern forming method, characterized in that a fine pattern is obtained by using exposure light of m or less. [In the above formula, n is a positive integer of 5 to 1000, R 1 , R 2 and R 3 are each independently a hydrogen atom or a methyl group, R 4 is a tricyclodecanyl group or the like, R 5 is a tetrahydropyranyl group or the like, x + y + z = 1, x is 0.1 to 0. 9, y represents 0.1 to 0.7, and z represents 0.01 to 0.7. [Effect] Chemistry for exposure to deep ultraviolet rays, for example, ArF excimer laser (193.3 nm), because it has a high transparency to deep ultraviolet rays having a wavelength of 220 nm or less and forms a fine pattern with high sensitivity and good shape It is useful as an amplification resist. |