| abstract |
(57) Summary: This novel photoresist is easily synthesized and has aqueous base developability, excellent O 2 RIE resistance, and D It has advantages such as high photosensitivity to UV, I-line and E-beam exposure. A photoresist comprising a poly (4-hydroxybenzyl) silsesquioxane polymer skeleton; and an aromatic azide-containing group covalently bonded to the phenol group of the poly (4-hydroxybenzyl) silsesquioxane polymer skeleton. |