http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63301943-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 1987-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ef0c9bb11344bfbd34bb308fec4894f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5b448c18e62c6a04d69ecb67fc2a931 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eb9187837867c9c08b7a2db9ce85446 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_719f6f8f5ba08eaa546aa2b4c7a1d2a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_249134be689cbc0d3642d044031f18d4 |
| publicationDate | 1988-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63301943-A |
| titleOfInvention | Negative type resist composition having two layer structure |
| abstract | PURPOSE:To improve the sensitivity of a resist by using a silicone resin which contains an azide compd. having an azide group in the structure of a ladder type silicone resin as a photosensitive group, for the upper layer resist of the resist having two layer structure. CONSTITUTION:The curing reaction of the silicon resin caused by ultraviolet light radiation is effectively carried out by directly substituting the terminal hydroxyl group of the silicone resin shown by formula I with the azide group. In the formula, (n) is a positive integer of 10-1,000 R may be the same group or the different group with each other, and is vinyl allyl, acryloyl or methacryloyl group. Thus, the photoresist which has the high sensitivity and the high resolution and is suitable for the upper layer resist of the two layer structure resist, is put into practical. The accuracy and the workability of a semiconductor integrated circuit, such as LSI and VLSI etc., are improved by using the titled composition. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0695385-A |
| priorityDate | 1987-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.