| abstract |
(57) [Summary] [Object] [Structure] An ITO sintered body having a sintered density of 90% or more and 100% or less and a sintered grain size of 1 µm or more and 20 µm or less, and a sputtering target thereof. [Effect] The sputtering target of the present invention has high thermal conductivity and transverse rupture strength, has a specific resistance of 1 × 10 −3 Ωcm or less, has the highest sputter rate, and has cracks and targets. It becomes possible to effectively prevent the generation of nodules on the surface of the get and to provide a transparent conductive film having an extremely low resistance especially on a low temperature substrate. |