| abstract |
The quality of a SiOCN film formed on a substrate is improved. A step of forming a layer containing silicon, oxygen, carbon, and nitrogen by simultaneously supplying a first aminosilane and an oxidizing agent to a substrate, and a first modification of the layer at a first temperature. And a step of forming a film containing silicon, oxygen, carbon, and nitrogen on a substrate, and a second temperature higher than the first temperature. Performing a second reforming treatment on the film. [Selection] Figure 4 |