| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2012-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2014-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2014514729-A |
| titleOfInvention |
Pattern loading reduction using silicon oxide multilayers |
| abstract |
Aspects of the present disclosure relate to a method of depositing a conformal silicon oxide multilayer on a surface of a patterned substrate. Each conformal silicon oxide multilayer is formed by depositing a plurality of sublayers. The sublayer allows bis (diethylamino) silane (BDEAS) and an oxygen-containing precursor to flow into the processing chamber such that a relatively uniform dielectric growth rate is achieved across the surface of the patterned substrate. By depositing. In order to further improve the conformality and reduce the wet etch rate of the conformal silicon oxide multilayer film, plasma treatment can be performed after the sublayer is formed. The deposition of conformal silicon oxide multilayers grown according to embodiments has a low dependence on pattern density, but is still suitable for non-sacrificial applications. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018137356-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11637025-B2 |
| priorityDate |
2011-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |