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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
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filingDate 2019-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dd3dfd0df989c28f0c405ec738dfede
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2d3b27ecb0292cc12721d1c195654f7
publicationDate 2021-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2021040060-A
titleOfInvention Semiconductor device manufacturing methods, substrate processing systems, and programs
abstract PROBLEM TO BE SOLVED: To provide a substrate processing system for improving the characteristics of an oxide film formed so as to embed in a recess provided on the surface of a substrate. SOLUTION: In a substrate processing system, a substrate processing sequence includes a step A1 in which a raw material containing an amino group is supplied to a substrate provided with a recess on the surface to form a first layer, and an oxidizing agent for the substrate. And the reducing agent is supplied at the same time, the first layer is oxidized, and the step A2 for forming the second layer is repeated non-simultaneously under the first temperature, so that the oxide film is embedded in the recess. The film forming step of forming the above and the annealing step of annealing the oxide film formed so as to be embedded in the recess at a second temperature higher than the first temperature are performed. [Selection diagram] Fig. 4
priorityDate 2019-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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