| abstract |
A method for filling features with tungsten, as well as related systems and apparatus, is described herein. The method includes inside-out filling into features as well as conformal deposition. The inside-out filling method may include selective deposition on the etched tungsten layer in the feature. Various implementations can use conformal and non-conformal etching methods. The methods described herein can be used to fill vertical features such as in tungsten vias and horizontal features such as vertical NAND (VNAND) word lines. Applications include logic and memory contact filling, DRAM embedded wordline filling, vertical integrated memory gate / wordline filling, 3D integration with through-silicon vias (TSV). [Selection] Figure 16 |