| abstract |
(57) [Summary] [Object] To provide a manufacturing method in which contact holes having two or more kinds of depths are opened, and then a conductor film is simultaneously filled in these contact holes. [Structure] Contact holes 7 having the same diameter in the interlayer insulating film 6, 8 is formed and a phosphorus-doped polycrystalline silicon film 9 is formed on the entire surface, this film is anisotropically etched to form a phosphorus-doped polycrystalline silicon film spacer 9a. The difference between the upper end of the phosphorus-doped polycrystalline silicon film spacer 9a and the upper ends of the contact holes 7 and 8 is about 1/2 of the diameter of the contact holes 7 and 8. Subsequently, the tungsten film 10A is formed by the selective CVD method. |