| abstract |
Methods of filling a feature with tungsten and related systems and apparatus are described herein. The methods include inside out fill techniques and conformal deposition within the feature. Inside out fill techniques include selective deposition on a tungsten layer etched into the feature. Conformal and non-conformal techniques can be used in accordance with various embodiments. The method described herein is used to fill vertical features such as tungsten vias and horizontal features such as vertical VAND word lines. Applications include logic and memory contact filling, DRAM buried wordline filling, vertically integrated memory gate / wordline filling, and 3D integration into silicon through vias (TSV). |