Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eccd894c99fea2d1c0c8735872bb2309 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 |
filingDate |
2018-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19afedbb3bc66a0ad734e408161b3d29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_281e77b7f9f0ed7a68949421c8507a11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21ca8f8284b0debe8ebffc571e088981 |
publicationDate |
2020-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-111032908-A |
titleOfInvention |
Atomic Layer Deposition Method for Selective Film Growth |
abstract |
Methods of forming metal-containing films by atomic layer deposition are provided. The method includes delivering a metal-containing complex, a purge gas, and a co-reactant to a first substrate under conditions sufficient to selectively grow the metal-containing film on at least a portion of the first substrate superior. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113544309-A |
priorityDate |
2017-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |