| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2011-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86278739d78f82e4e8019458d88aea98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_525325101e93817f46054bf13b442b93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_309b8ea7764a7a19b095c8136fa3ab48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1f762358ce675ded84a52e9098365f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a522dcb9829a18af31787c111c883d2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e0f392d18106711c48edd6afb616c73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a8c85543a423aed0265e49bc2ef7e8c |
| publicationDate |
2012-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2012049517-A |
| titleOfInvention |
Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device |
| abstract |
A semiconductor device with favorable electrical characteristics is manufactured with high productivity. According to a first condition, a seed crystal having high crystalline mixed phase grains at a low grain density is formed, and then the seed crystal mixed phase grains are grown on the seed crystal according to the second condition to thereby produce the mixed phase grains. A microcrystalline semiconductor film is stacked on the seed crystal so as to fill the gap. The first condition is that the flow rate of hydrogen is 50 to 1000 times the flow rate of the deposition gas containing silicon or germanium to dilute the deposition gas, and the pressure in the processing chamber is set to be greater than 1333 Pa and less than or equal to 13332 Pa. It is. The second condition is a condition in which the flow rate of hydrogen with respect to the flow rate of the deposition gas containing silicon or germanium is 100 times or more and 2000 times or less to dilute the deposition gas, and the pressure in the processing chamber is set to 1333 Pa or more and 13332 Pa or less. is there. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013133332-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7361911-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021241448-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016536801-A |
| priorityDate |
2010-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |