http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010135502-A

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Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2008-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75fc94b60018d119b5f3c182fcdd7687
publicationDate 2010-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010135502-A
titleOfInvention Semiconductor device and manufacturing method thereof
abstract A semiconductor element in which an off current is reduced while securing an on current is provided. An active layer including a substrate, an active layer supported by the substrate, the channel region, and a first region and a second region formed on both sides of the channel region, and an active layer A first contact layer 16a and a second contact layer 16b in contact with the first region and the second region, respectively, a first electrode 17a electrically connected to the first region via the first contact layer, and a second contact A second electrode 17b electrically connected to the second region through the layer 16b and a gate electrode 12 disposed to face the channel region through the gate insulating layer 13 are provided. The active layer 14A has a first microcrystalline silicon layer 14m having a peak area intensity attributed to SiH / peak area intensity attributed to SiH 2 of 2 or more in the Raman spectrum. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9252158-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010018479-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012049517-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012063723-A1
priorityDate 2008-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 17.