| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2007-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2009-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009076753-A |
| titleOfInvention |
Thin film transistor and manufacturing method of display device having thin film transistor |
| abstract |
A thin film transistor having excellent electrical characteristics and a method for manufacturing a display device including the thin film transistor are proposed. A gate insulating film is formed over a gate electrode, a semiconductor film including a microcrystalline semiconductor and an amorphous semiconductor is formed over the gate insulating film, and the amorphous semiconductor in the semiconductor film is selectively removed. Crystallinity at the interface between the gate insulating film and the microcrystalline semiconductor film is formed by leaving the microcrystalline semiconductor and growing the crystal using a deposition gas containing silicon or germanium using the microcrystalline semiconductor as a seed to form a microcrystalline semiconductor film. To increase. Next, a thin film transistor is formed using a microcrystalline semiconductor film with improved crystallinity at the interface with the gate insulating film as a channel formation region. [Selection] Figure 3 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8410486-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012169602-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9048327-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8778745-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012138573-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8450158-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9177761-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8394685-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101840183-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8426295-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8258025-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012049517-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8884297-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8859404-B2 |
| priorityDate |
2007-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |