| abstract |
A positive resist material containing a polymer compound having a repeating unit having a chain or cyclic alkyl group containing an aromatic hydrocarbon group and a tertiary carbon in the side chain. The material of the present invention has extremely high resolution in microfabrication technology, particularly ArF lithography technology, and is extremely useful for precise microfabrication. Further, in EB writing in mask processing, it is possible to provide a positive resist material that is suitable for EB exposure with fine pattern resolution, high sensitivity and high acceleration voltage EB, and excellent in etching resistance, and is extremely useful for mask processing. [Selection figure] None |