| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d4ada69388e0a1b68daaf536597c732 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-36 |
| filingDate |
2009-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_109158d29b499fe5571c8bd573987c5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_476c965e77529f6c007d2eae8d4a7b4a |
| publicationDate |
2010-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2010028130-A |
| titleOfInvention |
Method for producing hydrogenated silicon oxycarbide film having low dielectric constant |
| abstract |
A method for producing a low dielectric constant thin film of hydrogenated silicon oxycarbide by chemical vapor deposition is provided. A reactive gas mixture containing a methyl-containing silane and an oxygen-providing gas is introduced into a chemical vapor deposition chamber containing a substrate, and a reaction between the methyl-containing silane and the oxygen-providing gas is performed at 25 ° C. to 500 ° C. And forming a film containing hydrogen, silicon, carbon and oxygen having a dielectric constant of 3.6 or less on the substrate by adjusting the amount of oxygen present during the reaction. A method for producing a silicon film. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013545889-A |
| priorityDate |
1998-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |