| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24926
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1031 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
1999-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2002-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002503879-A |
| titleOfInvention |
Plasma processing method for depositing low dielectric constant film |
| abstract |
(57) [Summary] An organosilicon compound is reacted with an oxidizing gas at a constant RF power level of about 10 W to about 200 W or a pulse RF power level of about 20 W to about 500 W to deposit a low dielectric constant film. A method and apparatus are provided for: Increasing the dissociation of the oxidizing gas before mixing with the organosilicon compound facilitates controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent to another dielectric layer. The oxidized organosilane or organosiloxane film may also be used as an etch stop and intermetal dielectric layer to produce a dual damascene structure. Oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8012871-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10121693-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009117817-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8810034-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7718269-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8617981-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006173349-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9818639-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8053893-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4606713-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004158832-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008099811-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9064870-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8158266-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8431480-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008020592-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010028130-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9659867-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011530174-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10304726-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9490213-B2 |
| priorityDate |
1998-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |