| abstract |
(57) [Summary]nThe present invention relates to a method and an apparatus for processing a semiconductor substrate. The method primarily involves treating a substrate by forming a liquid short chain polymer of the general formula RaSi (OH) b or RaSiHb (OH) c on the substrate. Here, a + b = 4 or a + b + c = 4, a, b, and c are integers, Ri is a carbon-containing group, and a Si—C bond is estimated. |