| abstract |
(57) Abstract: A plasma CVD insulating film and a method for forming the same contain silicon as a main material and appropriately contain fluorine and carbon in order to obtain a low relative dielectric constant and moisture resistance for improving reliability. Obtain an insulating film. In order to form a fluorine-containing plasma oxide film that is a plasma CVD insulating film, for example, a plasma CV is used. The gas composition supplied to the D apparatus is SiH 4 , O 2 , CF 4 , By adding CO 2 gas in addition to Ar gas, carbon and fluorine are independently controlled to obtain proper fluorine concentration and carbon concentration. |