| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38c2e376c16f0e91536ef42dfc877bf7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2002-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5cb0710540c77a9dc460f4e1056cb1c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2321a6aa69920285df5130ce4e56f52e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d6f824cc475f5bc74b5f7e039369b7b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a5e3765207cba3f706ab8bf7aef831b |
| publicationDate |
2002-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002329718-A |
| titleOfInvention |
Siloxane polymer film on semiconductor substrate and method of manufacturing the same |
| abstract |
(57) Abstract: A highly reliable low dielectric constant siloxane polymer insulating film is manufactured. The siloxane polymer insulating film has a dielectric constant of 3.1 or less and has -SiR 2 O- repeating structural units having a C atom concentration of 20% or less. Siloxane polymers also have high heat and moisture resistance. The siloxane polymer has the chemical formula Si α O α-1 R 2α-β + 2 (O C n H 2n + 1) β ( where α is an integer of 1 to 3, beta is 2, n is silicon-based integer and R 1-3 is C 1-6 hydrocarbons that binds to Si) carbide It is formed by directly vaporizing a hydrogen compound and then introducing the vaporized compound together with an oxidant into a reaction chamber of a plasma CVD apparatus. The residence time of the source gas is extended by reducing the total flow rate of the reaction gas, thereby forming a porous siloxane polymer film having a low dielectric constant. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008020592-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7960279-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7582970-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008099811-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170000106-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7420279-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7602063-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7102236-B2 |
| priorityDate |
2001-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |