| abstract |
An improved technique for filling a gap formed on a substrate with a silicon oxide film is provided. A high density plasma process is used to deposit a first portion of silicon oxide on the substrate and in the gap. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor from a halogen precursor source into the substrate processing chamber, forming a high density plasma from the halogen precursor, and flowing the halogen precursor after the portion has been etched back. And the step of ending that. Thereafter, a halogen scavenger is flowed into the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited on the first portion of the silicon oxide film and in the gap using a high density plasma process. [Selection figure] None |