| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4411
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-507 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 |
| filingDate |
1999-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2002-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002512440-A |
| titleOfInvention |
Method and apparatus for modifying high aspect ratio gap profiles using differential plasma power |
| abstract |
SUMMARY An apparatus and method for modifying the profile of a narrow, high aspect ratio gap on a semiconductor substrate is used to fill the gap in a void-free manner. The differential heating characteristics of the substrate 17 in the high-density plasma chemical vapor deposition (HDP-CVD) apparatus 10 help prevent the gap from sticking before the gap is filled. The power distribution between the coils 29, 30 forming the plasma alters the angular dependence of the sputter etch component of the plasma and can therefore be used to modify the gap profile independently of or together with differential heating. . A heat source can be applied to the backside of the substrate 17 during the co-parallel deposition / etch process, further enhancing the differential heating profile modification characteristics. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006037229-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018152424-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009111351-A |
| priorityDate |
1998-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |