http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009099880-A

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
filingDate 2007-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ce7aa0b4d8874f4ef3eb81a95aa40bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3651e003c4cd80857ebd21b670e49490
publicationDate 2009-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009099880-A
titleOfInvention Plasma etching equipment
abstract The etching rate of silicon is increased and the selectivity is increased. Moisture is included in a CF 4 (halogen gas) from a supply source 13 by a humidifier 15 and is introduced into a pair of electrodes 11 of an atmospheric pressure plasma generator 10 to form plasma. Ozone is generated by the ozone generator 20. In the nozzle 30, a plasma gas path 31 that is continuous with the plasma generation unit and an ozone gas path 32 that is continuous with the ozone generation unit 20 are formed. The blowing path 34 is connected to the confluence portion 33 of the gas paths 31 and 32, and the tip opening 34 a is opposed to the workpiece 90. The distance from the joining part 33 to the workpiece 90 is set to 15 mm or less. [Selection] Figure 1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160103590-A
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priorityDate 2007-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Incoming Links

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Total number of triples: 28.