http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160103590-A

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filingDate 2015-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2016-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20160103590-A
titleOfInvention Substrate processing apparatus, Method for cleaning and operating the same
abstract The present invention relates to a substrate processing apparatus, a cleaning method and an operating method thereof, and more particularly, to a substrate processing apparatus capable of effectively inductively cleaning deposition byproducts generated when an inorganic film and an organic film are deposited, &Lt; / RTI &gt; A substrate processing apparatus according to an embodiment of the present invention includes a chamber in which chemical vapor deposition of a thin film is performed; A showerhead provided in the chamber to dispense process gas for deposition; A substrate support provided inside the chamber and on which the substrate on which the thin film is deposited is supported; A remote plasma source for dissociating a first etch gas outside the chamber to form a plasma, and providing a plasma of the first etch gas to the showerhead via a first supply line; And an ozone generator for generating ozone to the showerhead.
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