http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013527611-A
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
filingDate | 2011-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2013527611-A |
titleOfInvention | Method and apparatus for controlling surface texture modification of silicon wafers for photovoltaic cell devices |
abstract | Suitable for making photovoltaic (PV) wafer-based devices, for modifying the surface structure of a silicon substrate or deposited silicon layer in a controllable manner, using only gases in the atmospheric environment Method and apparatus. The method and apparatus includes placing a substrate or deposited layer on a movable transport device, preheating the substrate or deposited layer, and etching the substrate or deposited layer for etching through an atmospheric reactor. Applying at least one etchant in gaseous form at a controlled flow rate and angle to a substrate or deposited layer within the reactor under an etchant delivery module inside the reactor, and One etchant gas is selected from the group comprising a fluorine-containing gas and a chlorine-based compound. The technical problem solved is the provision of a highly productive dry etching method at atmospheric pressure. |
priorityDate | 2010-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.