| abstract |
An etching solution composition for forming a metal wiring for a TFT-LCD is provided. SOLUTION: The phosphoric acid is 55 to 75% by mass, the nitric acid is 0.75 to 1.9% by mass, the acetic acid is 10 to 20% by mass, and the Mo etching modifier is 0.05 to 0.5% by mass with respect to the total mass of the composition. %, A boron-containing compound of 0.02 to 3% by mass, and a remaining amount of water. Mo / AlNd double film or Mo / Al / Mo triple film, which are gate and source / drain wiring materials, can be wet etched in a single step to obtain an excellent tapered etching profile without undercut and protrusion phenomenon By eliminating the dry etching process, the process can be smoothed to improve the productivity and reduce the production cost. In addition, environmentally hazardous substances such as perchloric acid, unstable components that shorten the life of the etching solution, or fluorine compounds that corrode the glass of the substrate are unnecessary. [Selection] Figure 1 |