| abstract |
A manufacturing method for forming a fine pattern having a pitch exceeding a lithography limit is provided. A chemically amplified photoresist pattern is formed on a semiconductor substrate having an etched layer, and a silicon-containing polymer is spin-coated thereon. Exposure and baking are performed to form a cross-linking layer 19 at the interface between the photoresist pattern and the silicon-containing polymer. This is developed to remove the silicon-containing polymer that has not been cross-linked, and a cross-linked layer is formed only around the photoresist pattern. The cross-linked layer is etched back until the top of the photoresist pattern is exposed, leaving the cross-linked layer on the sidewalls of the photoresist pattern. The photoresist pattern is removed to form a fine pattern composed of a cross-linked layer. Using this as an etching mask, the etched layer is patterned. [Selection] Figure 1d |