| abstract |
A pattern is formed by forming a film of a water-soluble silicone resin as a main component on a photoresist pattern, crosslinking the photoresist pattern surface with the water-soluble silicone resin, and removing the uncrosslinked water-soluble silicone resin. A pattern forming method characterized by reducing the size of the space portion. [Effect] According to the present invention, the hole pattern after development is effectively reduced by crosslinking of the water-soluble silicone resin, and the shape after reduction is also good. In addition to ArF resists containing silicon, ArF single-layer resists not containing silicon and F 2 lithography resists containing fluorine have the same effect, regardless of the type of material applied to the exposure wavelength. It is possible to reduce the hole pattern. [Selection figure] None |