| abstract |
A thermal plasma jet crystallization technique is further improved, and a semiconductor film is crystallized with higher uniformity than before. A method of manufacturing a semiconductor film, comprising: a first step of forming a semiconductor film (104) on a substrate (106); and a thermal plasma (103) for a first axis parallel to a surface of the semiconductor film. A second step of hitting the semiconductor film while relatively moving along the first and second steps, wherein the second step sets the distance Φ in the first axial direction of the ejection hole (107) of the thermal plasma to the thermal plasma. And Φ / v, which is a value divided by the relative moving speed v of the substrate, is not less than 5 milliseconds and not more than 40 milliseconds, and between the electrode part (102) for generating the thermal plasma and the substrate The distance D is 2 mm or more and 15 mm or less. [Selection] Figure 1 |