| abstract |
It is an object of the present invention to provide a plasma processing apparatus and a plasma processing method capable of efficiently and efficiently generating a plasma in a short time by stably and efficiently generating a desired region to be processed of a substrate in a short time. In order to achieve this object, an annular chamber 7 surrounded by a dielectric member other than the opening, a coil 3 provided in the vicinity of the annular chamber, and a base table 1 disposed close to the opening 8 Wherein the annular chamber is provided along a plane perpendicular to the plane formed by the base table. With this feature, it is possible to stably and efficiently generate the plasma, and efficiently process the entire desired region of the substrate to be processed in a short time. |