| abstract |
PROBLEM TO BE SOLVED: To provide an underlayer film forming composition for lithography for forming a resist underlayer film that can be used as a hard mask or an antireflection film. A lithography process for manufacturing a semiconductor device including a resin (A), a polycarbosilane resin (B), a crosslinking catalyst (C), and a solvent (D) made of a polysilane resin, a polysiloxane resin, or a mixture thereof. A resist underlayer film forming composition used in the above. The resin (A) and the resin (B) have a mass ratio of 1 to 10,000 parts by mass of the resin (A) with respect to 100 parts by mass of the resin (B). A step of forming a resist underlayer film on the substrate with a resist underlayer film forming composition, a step of forming a resist film thereon, a step of forming a resist pattern by exposure and development, and a step of etching the underlayer film by a resist pattern And a method of manufacturing a semiconductor device, comprising processing a semiconductor substrate with a patterned underlayer film. [Selection] Figure 1 |