http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018230671-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-16 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate | 2018-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2018230671-A1 |
| titleOfInvention | Pattern forming method and silicon-containing film forming composition for EUV lithography |
| abstract | Provided are a pattern forming method and a silicon-containing film forming composition capable of forming a silicon-containing film excellent in resist pattern collapse inhibiting property. The present invention comprises a step of applying a silicon-containing film forming composition on at least one surface side of a substrate, and a surface side of the silicon-containing film formed by the silicon-containing film forming composition coating step opposite to the substrate. A step of applying the resist film forming composition to the step, exposing the resist film formed by the resist film forming composition applying step with extreme ultraviolet rays or an electron beam, and developing the exposed resist film. A pattern forming method, comprising: a silicon-containing film forming composition containing a compound having the first structural unit represented by formula (1) and a solvent. In formula (1), R 1 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms. X and Y are each independently a hydrogen atom, a hydroxy group, a halogen atom or a monovalent organic group having 1 to 20 carbon atoms. |
| priorityDate | 2017-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 93.