| abstract |
[PROBLEMS] To provide an insulating film forming material, an insulating film, a method for forming the same, and a semiconductor device which are capable of forming a porous insulating film having excellent mechanical strength and a low dielectric constant. SOLUTION: An insulating film forming material comprising a silicon compound having a carbon bond in a skeleton, a compound for forming holes which is decomposed or volatilized by heat treatment, and a solvent for dissolving the silicon compound and the compound for forming holes. Has a porous insulating film 28, 40, 50 formed by. |