| abstract |
Provided are: a pattern forming method capable of forming a silicon-containing film having an excellent ability to suppress resist pattern collapse; and a silicon-containing film-forming composition. The present invention pertains to a pattern forming method comprising: a step for coating a silicon-containing film-forming composition on at least one face of a substrate; a step for coating a resist film-forming composition on the reverse side of the substrate-side of a silicon-containing film formed in the step for coating the silicon-containing film-forming composition; a step in which a resist film formed in the step for coating the resist film-forming composition is exposed to extreme ultraviolet radiation or an electron beam; and a step for developing the exposed resist film, wherein the silicon-containing film-forming composition contains a solvent and a compound having a first structural unit represented by formula (1). In formula (1), R 1 is a substituted or unsubstituted C1-20 divalent hydrocarbon group, and X and Y are, each independently, a hydrogen atom, a hydroxyl group, a halogen atom, or a C1-20 monovalent organic group. |