| abstract |
A sulfonate represented by the following general formula (1a). CF 3 -CH (OH) -CF 2 SO 3 - M + (1a) (In the formula, M + represents lithium ion, sodium ion, potassium ion, ammonium ion, or tetramethylammonium ion.) [Effects] According to the present invention, since the molecule has a hydroxyl group which is a polar group, the acid diffusion length can be moderately suppressed by hydrogen bonding or the like, and a photoacid generator that generates these sulfonic acids. Can be used without any problem in the steps of coating, baking before exposure, exposure, baking after exposure, and development in the device production process. Furthermore, it is difficult to be affected by water remaining on the wafer during ArF immersion exposure, and defects can be suppressed. [Selection figure] None |