| abstract |
This resist composition comprises at least a base resin, a photo-acid generator and a solvent, wherein the photo-acid generator is a fluorinated sulfonic acid salt represented by general formula (4). (In the formula, X represents a hydrogen atom or a fluorine atom; n represents an integer of 1-6; R 1 represents a hydrogen atom, an alkyl group, an alkenyl group, an oxoalkyl group, an aryl group or an aralkyl group, wherein a hydrogen atom located on a carbon atom contained in R 1 may be substituted by a substituent; R 2 represents either R A O or R B R C N; and A represents a bivalent group.) The fluorinated sulfonic acid salt can act as a photo-acid generator having high solubility in a resist solvent, and is therefore suitable for preparing a resist composition that enables the formation of an excellent pattern shape having excellent resolution, a wide DOF, a small LER and high sensitivity in a lithography process. |