| abstract |
A semiconductor light emitting device capable of suppressing a decrease in light emission output with time and an increase in driving voltage in addition to high luminance and low driving voltage. A light emitting portion including at least an n-type cladding layer, an active layer, and a p-type cladding layer is formed on a substrate, and a p-type dopant concentration is 1 × 10 19 / cm 3 or more above the light emitting portion. And a thin As-based p-type contact layer 7 formed by adding a dopant of a material different from the dopant added to the p-type cladding layer, and a metal oxide material on the p-type contact layer 7 Is formed between the p-type cladding layer 5 and the p-type contact layer 7, and C (carbon) is intentionally or unavoidably contained. In addition, it has a buffer layer 6 made of a III / V semiconductor whose film thickness is not less than the diffusion length L of the dopant added to the p-type contact layer. [Selection] Figure 1 |