| abstract |
The present invention provides a light emitting device comprising a pn junction type light emitting portion and a compound semiconductor layer including at least a strain control layer laminated on the light emitting portion, wherein the light emitting portion has a composition formula of (Al X Ga 1 -X ) Y In 1 - Y P, wherein X and Y are numbers satisfying 0? X? 0.1 and 0.39? Y? 0.45, respectively, and the distortion adjusting layer has a laminated structure of a distortion light emitting layer and a barrier layer, And a lattice constant smaller than a lattice constant of the distortion light emitting layer and the barrier layer. According to the present invention, it is possible to provide a light emitting diode having an emission wavelength of 655 nm or more, excellent monochromaticity, high output and / or high efficiency and a high response speed. |