http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009076535-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a07d0b3e3169dd026ecd9113fc9cc4ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 |
| filingDate | 2007-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfd3af6b9be53963bdd01974f277c602 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de5e90af2e7071cf399b965d96f9440a |
| publicationDate | 2009-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009076535-A |
| titleOfInvention | Semiconductor wafer and light emitting device |
| abstract | Provided are a highly reliable semiconductor wafer and a light emitting device in which a decrease in light emission output due to diffusion of impurities into an active layer is suppressed. A semiconductor wafer according to the present invention is formed having a plurality of diffusion suppression layers including a heterojunction interface between a first cladding layer doped with an impurity of a first conductivity type and an active layer. A second diffusion-inhibiting multilayer structure layer, a second cladding layer doped with an impurity of the second conductivity type, and an active layer, and a second diffusion-inhibiting layer including a heterojunction interface; And a diffusion-inhibiting multilayer structure layer. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022262315-A1 |
| priorityDate | 2007-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.