| abstract |
Disclosed is a light emitting diode provided with a compound semiconductor layer which at least includes a pn-junction-type light emitting section and a distortion adjusting layer laminated on the light emitting layer. The light emitting section has the laminated structure of the distortion light emitting layer expressed by a composition formula of (Al X Ga 1-X ) Y In 1-Y P (where X and Y are the values satisfying inequalities of 0≤X≤0.1 and 0.39≤Y≤0.45, respectively) and a barrier layer, and the distortion adjusting layer is transparent to the light emitting wavelength and has a lattice constant smaller than that of the distortion light emitting layer and that of the barrier layer.nThe light emitting diode which has an emission wavelength of 655 nm or more, excellent monochromaticity, high power and/or high efficiency and high response speed is provided. |