| abstract |
A light emitting diode is provided by the present invention which includes a pn junction-type light emitting unit having a light emitting layer ( 10 ) composed of n layers of a strained light emitting layer ( 12 ) and n−1 layers of a barrier layer ( 13 ), wherein when a barrier layer exists, the light emitting layer ( 10 ) has a structure in which one strained light emitting layer ( 12 ) and one barrier layer ( 13 ) are laminated alternately, n represents an integer of 1 to 7, and the thickness of the light emitting layer ( 10 ) is not more than 250 nm. |