http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007048837-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2005-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_704062b9dddb4b9ae4dbd9b7cf970519 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24025318394acbafb6fb7eb40cf98e93 |
| publicationDate | 2007-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007048837-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | A method for manufacturing a semiconductor device, which is suitable for further miniaturization of the semiconductor device and is low in cost. The present invention relates to a method of manufacturing a semiconductor device having a gate electrode structure made of a polysilicon film formed on a surface of a semiconductor silicon substrate and an interlayer insulating film covering the gate electrode structure. A step of exposing a desired contact surface through the contact hole, a step of depositing an insulating film on at least the contact hole sidewall portion and the contact surface, and etching the insulating film back to form a sidewall on the contact hole sidewall portion. A method for manufacturing a semiconductor device, characterized by forming a thin insulating film. [Selection] Figure 25 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012033530-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8865589-B2 |
| priorityDate | 2005-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.