| abstract |
(57) Abstract: A method of manufacturing a semiconductor device capable of preventing a short circuit due to a void in an interlayer insulating film between wirings having an aspect ratio of 2.5 or more. SOLUTION: A contact hole 8 is opened between gate electrodes 3a, 3b. At this time, the void 7 is exposed on the side wall in the contact hole 8. Thereafter, a thin insulating film 11 having a thickness of about 10 to 60 nm is formed so as to cover the void 7 on the entire surface, and etch back is performed on the entire surface. A side wall 12 made of a thin insulating film 11 is formed only on the side walls in 8a and 8b. |