| abstract |
PROBLEM TO BE SOLVED: To provide a silica-based film having excellent etching resistance, chemical resistance and moisture resistance, good adhesion and low dielectric constant, and a silica-based film forming material suitable for forming the silica-based film. Provided. A silica-based film forming material of the present invention includes a silicone polymer having CHx, Si—O—Si bond, Si—CH 3 bond, and Si—CHx— bond as part of its structure. x represents an integer of 0 to 2. An embodiment in which the silicone polymer is obtained by subjecting the silicon compound represented by the general formulas (1) to (3) and the silicon compound represented by the general formulas (4) to (7) to a hydrolytic condensation polymerization reaction is preferable. . Embedded image Embedded image In general formulas (1) to (7), n represents 0 or 1. R 1 represents any of chlorine, bromine, fluorine and hydrogen when n = 0, and when n = 1, represents any one of a hydrocarbon having 1 to 4 carbon atoms, an aromatic hydrocarbon, hydrogen or a carboxyl group. To express. R 2 represents any one of a hydrocarbon having 1 to 4 carbon atoms, an aromatic hydrocarbon, and hydrogen. R 3 represents any of a hydrocarbon having 1 to 3 carbon atoms and an aromatic hydrocarbon. [Selection figure] None |