| abstract |
A topcoat for a photoresist that is very suitable in photolithography and immersion photolithography systems is provided. The topcoat of the present invention has the formula T m R3 (where m is equal to 8, 10, or 12) and the formula Q n M n R1, R2, R3 (where n is 8, 10, or 12). Equal) functionalized polyhedral oligomeric silsesquioxane derivatives. The functional group preferably contains a basic aqueous solution-soluble part. [Selection] Figure 5 |