| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24802 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2006-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02602d7bf4a6b83c0a7c1feabedae8f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51fa0ce4d4abeeaeb492059877858d89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99bdff9aa47d25894f4e6e415f25ea71 |
| publicationDate |
2008-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008058515-A |
| titleOfInvention |
Resist cover film forming material, resist pattern forming method, electronic device and manufacturing method thereof |
| abstract |
Provided is a resist cover film forming material that can be suitably used for a resist cover film for immersion exposure and has a high transmittance with respect to ArF laser light or the like. The resist film is used to form a resist cover film that covers the resist film when immersion exposure is performed. The resist film has at least an alkali-soluble group and is represented by the following general formula (1). A resist cover film-forming material comprising at least a silicon-containing polymer and an organic solvent capable of dissolving the silicon-containing polymer. [Chemical 1] [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014072252-A |
| priorityDate |
2006-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |