| abstract |
PROBLEM TO BE SOLVED: To provide a positive resist material, particularly a chemically amplified positive resist having high resolution, exposure margin, small density difference, process adaptability, good pattern shape after exposure, and excellent etching resistance. Provide material. A polymer compound comprising at least a repeating unit by copolymerization represented by the following general formula (1) and having a weight average molecular weight in the range of 1,000 to 500,000, and the polymer compound as a base Provided is a pattern forming method comprising a positive resist material contained as a resin and a step of applying the polymer compound onto a substrate. [Chemical 1] [Selection figure] None |